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Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors

Sporea, RA, Trainor, M, Young, N, Shannon, JM and Silva, SRP (2015) Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors IEEE.

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Abstract

Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by temperature variations. We discuss design characteristics, which ensure reliable operation in spite of SGT temperature dependence of drain current, and their implications for manufacturability and large signal operation.

Item Type: Other
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
AuthorsEmailORCID
Sporea, RAUNSPECIFIEDUNSPECIFIED
Trainor, MUNSPECIFIEDUNSPECIFIED
Young, NUNSPECIFIEDUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Date : 2015
Identification Number : 10.1109/TED.2015.2412452
Uncontrolled Keywords : Inverters, Logic gates, Switches, Temperature, Temperature dependence, Transistors, Complementary logic gate, Schottky barrier, gain, noise margin (NM), polysilicon (poly-Si), source-gated transistor (SGT), temperature effects, thin-film transistor.
Additional Information : (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works."
Depositing User : Symplectic Elements
Date Deposited : 14 Jul 2015 09:53
Last Modified : 14 Jul 2015 11:13
URI: http://epubs.surrey.ac.uk/id/eprint/807448

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