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n-type chalcogenides by ion implantation.

Hughes, MA, Fedorenko, Y, Gholipour, B, Yao, J, Lee, TH, Gwilliam, RM, Homewood, KP, Hinder, S, Hewak, DW, Elliott, SR and Curry, RJ (2014) n-type chalcogenides by ion implantation. Nat Commun, 5.

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Abstract

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Item Type: Article
Authors :
NameEmailORCID
Hughes, MAUNSPECIFIEDUNSPECIFIED
Fedorenko, YUNSPECIFIEDUNSPECIFIED
Gholipour, BUNSPECIFIEDUNSPECIFIED
Yao, JUNSPECIFIEDUNSPECIFIED
Lee, THUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Hinder, SUNSPECIFIEDUNSPECIFIED
Hewak, DWUNSPECIFIEDUNSPECIFIED
Elliott, SRUNSPECIFIEDUNSPECIFIED
Curry, RJUNSPECIFIEDUNSPECIFIED
Date : 2014
Identification Number : 10.1038/ncomms6346
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:14
Last Modified : 31 Oct 2017 17:10
URI: http://epubs.surrey.ac.uk/id/eprint/806649

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