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Concentration profiles of antimony-doped shallow layers in silicon

Alzanki, T, Gwilliam, R, Emerson, N, Tabatabaian, Z, Jeynes, C and Sealy, BJ (2004) Concentration profiles of antimony-doped shallow layers in silicon SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (6), PII S0. pp. 728-732.

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Item Type: Article
Authors :
AuthorsEmailORCID
Alzanki, TUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Emerson, NUNSPECIFIEDUNSPECIFIED
Tabatabaian, ZUNSPECIFIEDUNSPECIFIED
Jeynes, CUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Date : 1 June 2004
Identification Number : https://doi.org/10.1088/0268-1242/19/6/012
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, CONDENSED MATTER
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:14
Last Modified : 28 Mar 2017 13:14
URI: http://epubs.surrey.ac.uk/id/eprint/806538

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