On fabrication of high concentration Mn doped Si by ion implantation: problem and challenge
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Peng, N, Jeynes, C, Gwilliam, RM, Webb, RP, Pan, F and Chen, X (2012) On fabrication of high concentration Mn doped Si by ion implantation: problem and challenge In: 18th International Vacuum Congress (IVC)/International Conference on Nanoscience and Technology (ICNT)/14th International Conference on Surfaces Science (ICSS)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA), 2010-08-23 - 2010-08-27, Beijing, PEOPLES R CHINA.
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Item Type: | Conference or Workshop Item (UNSPECIFIED) | ||||||||
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Divisions : | Surrey research (other units) | ||||||||
Authors : | Peng, N, Jeynes, C, Gwilliam, RM, Webb, RP, Pan, F and Chen, X | ||||||||
Date : | 1 January 2012 | ||||||||
DOI : | 10.1016/j.phpro.2012.03.577 | ||||||||
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Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Materials Science, Coatings & Films, Physics, Applied, Engineering, Science & Technology - Other Topics, Materials Science, Physics, ion implantation, dilute magnetic semiconducotr, Si, FERROMAGNETISM | ||||||||
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Depositing User : | Symplectic Elements | ||||||||
Date Deposited : | 28 Mar 2017 13:14 | ||||||||
Last Modified : | 23 Jan 2020 13:08 | ||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/806492 |
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