On fabrication of high concentration Mn doped Si by ion implantation: problem and challenge

Peng, N, Jeynes, C, Gwilliam, RM, Webb, RP, Pan, F and Chen, X (2012) On fabrication of high concentration Mn doped Si by ion implantation: problem and challenge In: 18th International Vacuum Congress (IVC)/International Conference on Nanoscience and Technology (ICNT)/14th International Conference on Surfaces Science (ICSS)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA), 2010-08-23 - 2010-08-27, Beijing, PEOPLES R CHINA.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Divisions :	Surrey research (other units)
Authors :	Peng, N, Jeynes, C, Gwilliam, RM, Webb, RP, Pan, F and Chen, X
Date :	1 January 2012
DOI :	10.1016/j.phpro.2012.03.577
Contributors :	Contribution Name Email ORCID http://www.loc.gov/loc.terms/relators/PBL ELSEVIER SCIENCE BV,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Materials Science, Coatings & Films, Physics, Applied, Engineering, Science & Technology - Other Topics, Materials Science, Physics, ion implantation, dilute magnetic semiconducotr, Si, FERROMAGNETISM
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 13:14
Last Modified :	23 Jan 2020 13:08
URI:	http://epubs.surrey.ac.uk/id/eprint/806492

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