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Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

Hughes, MA, Fedorenko, Y, Gwilliam, RM, Homewood, KP, Curry, RJ, Hinder, S, Gholipour, B, Hewak, DW, Lee, T-H and Elliott, SR (2014) Ion-implantation-enhanced chalcogenide-glass resistive-switching devices Applied Physics Letters, 105 (8).

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Abstract

We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6 × 10 and 3 × 10 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise. © 2014 AIP Publishing LLC.

Item Type: Article
Authors :
AuthorsEmailORCID
Hughes, MAUNSPECIFIEDUNSPECIFIED
Fedorenko, YUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Curry, RJUNSPECIFIEDUNSPECIFIED
Hinder, SUNSPECIFIEDUNSPECIFIED
Gholipour, BUNSPECIFIEDUNSPECIFIED
Hewak, DWUNSPECIFIEDUNSPECIFIED
Lee, T-HUNSPECIFIEDUNSPECIFIED
Elliott, SRUNSPECIFIEDUNSPECIFIED
Date : 25 August 2014
Identification Number : https://doi.org/10.1063/1.4894245
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:13
Last Modified : 28 Mar 2017 13:13
URI: http://epubs.surrey.ac.uk/id/eprint/806384

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