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Investigating the efficiency limitations of GaN-based emitters

Crutchley, BG, Marko, Igor, Adams, Alfred and Sweeney, Stephen (2013) Investigating the efficiency limitations of GaN-based emitters 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013.

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Abstract

In this study low temperature and high pressure techniques have been used to investigate the recombination processes taking place in InGaN-based quantum well light emitting diodes (LEDs) which have emission across the blue-green region. Despite relatively high peak efficiencies of the GaN-based emitters, there remain issues relating to the strong efficiency reduction at higher currents that are required for normal operation in most applications. It is observed that there is a relative reduction in efficiency as injection current is increased in a phenonmenon which is known as efficiency droop. There are three main arguments for the cause of efficiency droop that are discussed in the literature: non-radiative Auger recombination, carrier leakage and a defect-related loss mechanism. In spite of extensive research to date, there is little agreement on the cause of efficiency droop as most experiments can only measure the overall efficiency behaviour leading to difficulties in determining the individual contributions from the different loss mechanisms. © 2013 IEEE.

Item Type: Article
Authors :
NameEmailORCID
Crutchley, BGUNSPECIFIEDUNSPECIFIED
Marko, IgorI.Marko@surrey.ac.ukUNSPECIFIED
Adams, AlfredAlf.Adams@surrey.ac.ukUNSPECIFIED
Sweeney, StephenS.Sweeney@surrey.ac.ukUNSPECIFIED
Date : 2013
Identification Number : 10.1109/CLEOE-IQEC.2013.6801007
Depositing User : Symplectic Elements
Date Deposited : 19 Jul 2017 14:38
Last Modified : 31 Oct 2017 16:56
URI: http://epubs.surrey.ac.uk/id/eprint/806039

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