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Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure Conference on Lasers and Electro-Optics Europe - Technical Digest. p. 175.

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Abstract

The Auger recombination in 1.3μm InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical model was used which includes strain, piezoelectric field and electronic structure calculated in the QDs of truncated pyramid shape. It was found that the radiative current increases with pressure, but the Auger recombination current decreases with pressure and is the dominant recombination path at room temperature in 1.3μm QD lasers. © 2003 IEEE.

Item Type: Article
Authors :
AuthorsEmailORCID
Marko, IPUNSPECIFIEDUNSPECIFIED
Andreev, ADUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Krebs, RUNSPECIFIEDUNSPECIFIED
Reithmaier, JPUNSPECIFIEDUNSPECIFIED
Forchel, AUNSPECIFIEDUNSPECIFIED
Date : 2003
Identification Number : https://doi.org/10.1109/CLEOE.2003.1312236
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:11
Last Modified : 28 Mar 2017 13:11
URI: http://epubs.surrey.ac.uk/id/eprint/806036

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