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Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers

Marko, IP, Adams, AR, Massé, NF and Sweeney, SJ (2014) Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers IET Optoelectronics, 8 (2). pp. 88-93.

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Abstract

The impact of carrier density non-pinning above threshold on laser performance is studied in different quantum dot/dash lasers with room temperature emission wavelengths of 0.98-1.52 μm. Owing to inhomogeneity in the active region, the non-pinning may be important even above room temperature because of the non-thermal carrier distribution between the dots. This has a large impact on the external differential efficiency and the output power of the devices. In the presence of non-radiative recombination, non-pinning will further decrease the output power and the slope efficiency because of a significant reduction in the number of carriers available for stimulated emission. © The Institution of Engineering and Technology 2014.

Item Type: Article
Authors :
NameEmailORCID
Marko, IPUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Massé, NFUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Date : 2014
Identification Number : 10.1049/iet-opt.2013.0055
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:10
Last Modified : 28 Mar 2017 13:10
URI: http://epubs.surrey.ac.uk/id/eprint/805454

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