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Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

Curry, RJ, Gillin, WP, Knights, AP and Gwilliam, R (2000) Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm Applied Physics Letters, 77 (15). pp. 2271-2273.

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Abstract

1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′- diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer. © 2000 American Institute of Physics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
AuthorsEmailORCID
Curry, RJUNSPECIFIEDUNSPECIFIED
Gillin, WPUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Date : 9 October 2000
Additional Information :

Copyright 2000 Applied Physics Letters. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 77 and may be found at R. J. Curry et al., Appl. Phys. Lett. 77, (2000)

Depositing User : Symplectic Elements
Date Deposited : 22 Jul 2014 09:19
Last Modified : 22 Jul 2014 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/805371

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