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1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates

Curry, RJ, Gillin, WP, Knights, AP and Gwilliam, R (2001) 1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates Optical Materials, 17 (1-2). pp. 161-163.

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Abstract

We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 μm electroluminescence at room temperature. The emitting layer used was erbium tris(8-hydroxyquinoline) and energy is transferred from excitons formed on the organic ligands into the erbium ion. Characteristic emission is observed through the silicon substrate at 1.5 μm due to the I to I intra-atomic transition. Whilst the device is not suited to conventional OLED applications, due to the long lifetime of the I to I transition, it is a significant step towards the development of a 1.5 μm laser which can be integrated onto a silicon waveguide. © 2001 Elsevier Science B.V.

Item Type: Article
Authors :
AuthorsEmailORCID
Curry, RJUNSPECIFIEDUNSPECIFIED
Gillin, WPUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Date : June 2001
Identification Number : https://doi.org/10.1016/S0925-3467(01)00077-5
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:10
Last Modified : 28 Mar 2017 13:10
URI: http://epubs.surrey.ac.uk/id/eprint/805367

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