University of Surrey

Test tubes in the lab Research in the ATI Dance Research

An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

Hughes, MA, Homewood, KP, Curry, RJ, Ohno, Y and Mizutani, T (2013) An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry Applied Physics Letters, 103 (13).

[img]
Preview
Text
Published version.pdf
Available under License : See the attached licence file.

Download (802kB) | Preview
[img]
Preview
Text (licence)
SRI_deposit_agreement.pdf
Available under License : See the attached licence file.

Download (33kB) | Preview

Abstract

A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I) of 6 × 10 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I and η were 2 × 10 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact. © 2013 AIP Publishing LLC.

Item Type: Article
Authors :
AuthorsEmailORCID
Hughes, MAUNSPECIFIEDUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Curry, RJUNSPECIFIEDUNSPECIFIED
Ohno, YUNSPECIFIEDUNSPECIFIED
Mizutani, TUNSPECIFIEDUNSPECIFIED
Date : 23 September 2013
Identification Number : 10.1063/1.4823602
Depositing User : Symplectic Elements
Date Deposited : 03 Apr 2014 13:52
Last Modified : 09 Jun 2014 13:57
URI: http://epubs.surrey.ac.uk/id/eprint/805313

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800