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The electrical characteristics of a heterojunction diode formed from an aniline oligomer LB-deposited onto poly(3-methylthiophene)

Riul, A, Mills, CA and Taylor, DM (2000) The electrical characteristics of a heterojunction diode formed from an aniline oligomer LB-deposited onto poly(3-methylthiophene) JOURNAL OF MATERIALS CHEMISTRY, 10 (1). pp. 91-97.

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Item Type: Article
Authors :
AuthorsEmailORCID
Riul, AUNSPECIFIEDUNSPECIFIED
Mills, CAUNSPECIFIEDUNSPECIFIED
Taylor, DMUNSPECIFIEDUNSPECIFIED
Date : 1 January 2000
Identification Number : https://doi.org/10.1039/a904112e
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Chemistry, Physical, Materials Science, Multidisciplinary, Chemistry, Materials Science, CHEMISTRY, PHYSICAL, MATERIALS SCIENCE, MULTIDISCIPLINARY, LIGHT-EMITTING-DIODES, LANGMUIR-BLODGETT-FILMS, SCHOTTKY-BARRIER DIODES, 16-MER POLYANILINE, REDOX CONDUCTION, METAL, POLYMER, DEVICES, ELECTRODES, INTERFACES
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:10
Last Modified : 28 Mar 2017 13:10
URI: http://epubs.surrey.ac.uk/id/eprint/805301

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