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Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric

Opoku, C, Hoettges, KF, Hughes, MP, Stolojan, V, Silva, SRP and Shkunov, M (2013) Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric Nanotechnology, 24 (40). 405203-4(7pp).

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Abstract

The present work focuses on nanowire (NW) applications as semiconducting elements in solution processable field-effect transistors (FETs) targeting large-area low-cost electronics. We address one of the main challenges related to NW deposition and alignment by using dielectrophoresis (DEP) to select multiple ZnO nanowires with the correct length, and to attract, orientate and position them in predefined substrate locations. High-performance top-gate ZnO NW FETs are demonstrated on glass substrates with organic gate dielectric layers and surround source-drain contacts. Such devices are hybrids, in which inorganic multiple single-crystal ZnO NWs and organic gate dielectric are synergic in a single system. Current-voltage (I-V) measurements of a representative hybrid device demonstrate excellent device performance with high on/off ratio of 10^7, steep subthreshold swing (s-s) of 400 mV/dec and high electron mobility of 35 cm2 V-1 s-1 in N2 ambient. Stable device operation is demonstrated after 3 months of air exposure, where similar device parameters are extracted including on/off ratio of 4x10^6, s-s 500 mV/dec and field-effect mobility of 28 cm2 V-1 s-1. These results demonstrate that DEP can be used to assemble multiples of NWs from solvent formulations to enable low-temperature hybrid transistor fabrication for large-area inexpensive electronics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmailORCID
Opoku, CUNSPECIFIEDUNSPECIFIED
Hoettges, KFUNSPECIFIEDUNSPECIFIED
Hughes, MPUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Shkunov, MUNSPECIFIEDUNSPECIFIED
Date : 2013
Identification Number : 10.1088/0957-4484/24/40/405203
Related URLs :
Additional Information : Copyright 2013 Institute of Physics. This is the author's accepted manuscript.
Depositing User : Symplectic Elements
Date Deposited : 25 Oct 2013 10:55
Last Modified : 11 Oct 2014 01:08
URI: http://epubs.surrey.ac.uk/id/eprint/804039

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