Process-orientated physics-based modeling of microwave power transistors: Small-and large-signal characterization
Everett, JP, Kearney, MJ, Snowden, CM, Rueda, H, Johnson, EM, Aaen, PH and Wood, J (2012) Process-orientated physics-based modeling of microwave power transistors: Small-and large-signal characterization IEEE MTT-S International Microwave Symposium Digest.
Available under License : See the attached licence file.
The coupling between charge transport, heat and energy flow required to model high frequency power devices is developed in the context of a computationally efficient physics-based model, which has been successfully applied to microwave laterally diffused MOS transistors. The accurate prediction of small-and large-signal microwave characteristics, and the physical insight gained, can be used in the process-orientated optimization and process sensitivity analysis of LDMOS power FETs. The charge-based model is well-suited to non-linear CAD implementation for applications such as power amplifier design. © 2012 IEEE.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Identification Number :||https://doi.org/10.1109/MWSYM.2012.6259439|
|Additional Information :||© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||04 Oct 2013 13:20|
|Last Modified :||09 Jun 2014 13:33|
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