The effects of material interfaces on thermal resistance values for high-power microwave transistors
Johnson, EM, Aaen, PH, Bridges, D and Wood, J (2012) The effects of material interfaces on thermal resistance values for high-power microwave transistors 79th ARFTG Microwave Measurement Conference: Non-Linear Measurement Systems, ARFTG 2012.
The Effects of Material Interfaces on Thermal Resistance Values for High-Power Microwave Transistors - formatted v5.pdf
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In this paper, we examine the effects that the thermal interface between materials has on the thermal resistance extracted from electrical measurements. We also examine the consequent degradation in electrical performance. We present the characterization of the transistor under various thermal environments: mounted in packages, using various die attachments, and on-wafer. A wide range of thermal resistances are extracted and we demonstrate the importance of proper characterization during on-wafer thermal measurements. Finite-element simulations show that we can account for various thermal interfaces by changing the coefficient of thermal transfer from the semiconductor device to the material beneath it. Simulations are shown to be in good agreement with measured results. © 2012 IEEE.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Identification Number :||https://doi.org/10.1109/ARFTG79.2012.6291196|
|Additional Information :||© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||26 Sep 2013 15:41|
|Last Modified :||09 Jun 2014 13:12|
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