A nonlinear electro-thermal scalable model for high-power RF LDMOS transistors
Wood, J, Aaen, PH, Bridges, D, Lamey, D, Guyonnet, M, Chan, DS and Monsauret, N (2009) A nonlinear electro-thermal scalable model for high-power RF LDMOS transistors IEEE Transactions on Microwave Theory and Techniques, 57 (1). pp. 282-292.
Available under License : See the attached licence file.
A new nonlinear charge-conservative scalable dynamic electro-thermal compact model for laterally defused MOS (LDMOS) RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. A new extrinsic network and extrinsic parameter-extraction methodology is developed for high-power RF LDMOS transistor modeling, using manifold deembedding by electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The intrinsic model comprises controlled charge and current sources that have been implemented using artificial neural networks, designed to permit accurate extrapolation of the transistor's performance outside of the measured data domain. A thermal sub-circuit is coupled to the nonlinear model. Large-signal validation of this new model shows a very good agreement with measurements at 2.14 GHz. © 2008 IEEE.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Date :||January 2009|
|Identification Number :||10.1109/TMTT.2008.2011172|
|Additional Information :||© 2009 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||26 Sep 2013 13:56|
|Last Modified :||09 Jun 2014 13:12|
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