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A nonlinear electro-thermal model for high power RF LDMOS transistors

Bridges, D, Wood, J, Guyonnet, M and Aaen, PH (2008) A nonlinear electro-thermal model for high power RF LDMOS transistors IEEE MTT-S International Microwave Symposium Digest. pp. 475-478.

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Abstract

A new nonlinear, charge-conservative, dynamic electro-thermal compact model for LDMOS RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. The intrinsic model current and charge sources are obtained by integration of the real and imaginary components, respectively, of the small-signal Y-parameters: this yields a charge-conservative model by design. A thermal sub-circuit is used to introduce dynamic thermal dependence, and thermal threshold voltage shift is built in. DC and large-signal validation of the model is presented. © 2008 IEEE.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
AuthorsEmailORCID
Bridges, DUNSPECIFIEDUNSPECIFIED
Wood, JUNSPECIFIEDUNSPECIFIED
Guyonnet, MUNSPECIFIEDUNSPECIFIED
Aaen, PHUNSPECIFIEDUNSPECIFIED
Date : 2008
Identification Number : 10.1109/MWSYM.2008.4633206
Depositing User : Symplectic Elements
Date Deposited : 04 Oct 2013 15:46
Last Modified : 09 Jun 2014 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/803446

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