Characterization and modeling of LDMOS power FETs for RF power amplifier applications
Wood, J, Aaen, PH and Piá, JA (2008) Characterization and modeling of LDMOS power FETs for RF power amplifier applications 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systms - Digest of Papers, SiRF. pp. 134-138.
Available under License : See the attached licence file.
In this review we present a measurement-based approach to the creation of a successful circuit model of a high-power RF FET. We describe some of the measurement challenges that we face in the characterization and validation of the FET model, and our approach to their solution. We also outline some of the simulation and modeling techniques that are used in the construction of the complete transistor model. The model itself is fully nonlinear, with a self-consistent dynamic electrothermal component, and includes the in-package matching and package components, which are derived from electro-magnetic simulations. © 2008 IEEE.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Identification Number :||10.1109/SMIC.2008.40|
|Additional Information :||© 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||26 Sep 2013 15:16|
|Last Modified :||09 Jun 2014 13:12|
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