Systematic waveform engineering enabling high efficiency modes of operation in Si LDMOS at both L-band and S-band frequencies
Sheikh, A, Roff, C, Benedikt, J, Tasker, PJ, Noori, B, Aaen, P and Wood, J (2008) Systematic waveform engineering enabling high efficiency modes of operation in Si LDMOS at both L-band and S-band frequencies IEEE MTT-S International Microwave Symposium Digest. pp. 1143-1146.
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This paper demonstrates that by robust waveform engineering it is possible for high power Si LDMOS to achieve very high efficiency at frequencies up to 2.1GHz. Class F amplifier operation was realized in a 5W LDMOS device by the successful application of robust waveform engineering procedures; undertaken at the current generator plane. The peak power added efficiency was found to be 78% at 0.9GHz and 77% at 2.1GHz. In both cases the RF waveforms were optimized in terms of the gate voltage, fundamental and harmonic impedances. The main difference at 2.1GHz was the change in fundamental impedance to a more reactive impedance to compensate for the dynamic device output capacitance. To the authors' knowledge this is the highest efficiencies reported in the literature for Si LDMOS devices at 2.1GHz. © 2008 IEEE.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Identification Number :||https://doi.org/10.1109/MWSYM.2008.4633259|
|Additional Information :||© 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||26 Sep 2013 14:35|
|Last Modified :||09 Jun 2014 13:12|
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