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Multi-physics modeling of high-power microwave transistors

Aaen, PH, Wood, J, Bridges, D, Zhang, L, Johnson, E, Barbieri, T, Pla, J, Snowden, CM, Everett, JP and Kearney, MJ (2012) Multi-physics modeling of high-power microwave transistors IEEE MTT-S International Microwave Symposium Digest.

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In this paper, we present a multi-physics approach for the simulation of high-power microwave transistors in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze an LDMOS transistor operating at 2.14 GHz. The total gate width of the die is 102 mm, and the die is placed in a ceramic package and connected using bond-wire arrays at gate and drain. The effects of three different gate bond-pad metallization on the transistor efficiency are studied. Plots of the spatial distribution of the drain efficiency, and time-domain current and voltage provide a unique insight and understanding of the behaviours induced by the different bond-pads. © 2012 IEEE.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
Aaen, PH
Wood, J
Bridges, D
Zhang, L
Johnson, E
Barbieri, T
Pla, J
Snowden, CM
Everett, JP
Kearney, MJ
Date : 2012
DOI : 10.1109/MWSYM.2012.6259471
Contributors :
Additional Information : © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 23 Sep 2013 13:00
Last Modified : 31 Oct 2017 15:14

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