Radiation hardness of a large area CMOS active pixel sensor for bio-medical applications
Esposito, M, Diaz, O, Wells, K, Anaxagoras, T and Allinson, NM (2012) Radiation hardness of a large area CMOS active pixel sensor for bio-medical applications IEEE Nuclear Science Symposium Conference Record. pp. 1300-1304.
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A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor enclosed geometry and P+ doped guard rings to offer ionizing radiation tolerance. The detector was irradiated with 160 kVp X-rays up to a total dose of 94 kGy(Si) and remained functional. The radiation damage produced in the device has been studied, resulting in a dark current density increase per decade of 96±5 pA/cm/decade and a damage threshold of 204 Gy(Si). The damage produced in the detector has been compared with a commercially available CMOS APS, showing a radiation tolerance about 100 times higher. Moreover Monte Carlo simulations have been performed to evaluate primary and secondary energy deposition in each of the detector stages. © 2012 IEEE.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering|
|Identification Number :||10.1109/NSSMIC.2012.6551318|
|Additional Information :||© 2012 IEEE. Paper presented at the Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)Oct 27 - Nov 3 2012, Anaheim, CA. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||01 Oct 2013 17:12|
|Last Modified :||09 Jun 2014 13:44|
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