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Absorption characteristics of GaAsBi/GaAs diodes in the near-infrared

Hunter, CJ, Bastiman, F, Mohmad, AR, Richards, R, Ng, JS, David, JPR and Sweeney, SJ (2012) Absorption characteristics of GaAsBi/GaAs diodes in the near-infrared IEEE Photonics Technology Letters, 24 (23). pp. 2191-2194.

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The absorption properties of a series of GaAsBi /GaAs layers with ∼ Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAsBi/GaAs layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 μ. The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing). © 1989-2012 IEEE.

Item Type: Article
Authors :
Hunter, CJ
Bastiman, F
Mohmad, AR
Richards, R
Ng, JS
David, JPR
Sweeney, SJ
Date : 2012
DOI : 10.1109/LPT.2012.2225420
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:21
Last Modified : 31 Oct 2017 15:13

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