The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers
Hossain, N, Hild, K, Jin, SR, Yu, S-Q, Johnson, SR, Ding, D, Zhang, Y-H and Sweeney, SJ (2013) The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 102 (4), ARTN 0.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||28 January 2013|
|Identification Number :||https://doi.org/10.1063/1.4789859|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, MOLECULAR-BEAM EPITAXY, AUGER RECOMBINATION, DOT LASERS, TEMPERATURE, GAAS, PERFORMANCE, HETEROSTRUCTURES, PRESSURE, MBE|
|Related URLs :|
|Additional Information :||Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 102 (4) and may be found at http://dx.doi.org/10.1063/1.4789859|
|Depositing User :||Symplectic Elements|
|Date Deposited :||07 Oct 2013 09:47|
|Last Modified :||23 Jan 2015 14:33|
Actions (login required)
Downloads per month over past year