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The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers

Hossain, N, Hild, K, Jin, SR, Yu, S-Q, Johnson, SR, Ding, D, Zhang, Y-H and Sweeney, SJ (2013) The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers APPLIED PHYSICS LETTERS, 102 (4), ARTN 0.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Hossain, NUNSPECIFIEDUNSPECIFIED
Hild, KUNSPECIFIEDUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Yu, S-QUNSPECIFIEDUNSPECIFIED
Johnson, SRUNSPECIFIEDUNSPECIFIED
Ding, DUNSPECIFIEDUNSPECIFIED
Zhang, Y-HUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Date : 28 January 2013
Identification Number : 10.1063/1.4789859
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, MOLECULAR-BEAM EPITAXY, AUGER RECOMBINATION, DOT LASERS, TEMPERATURE, GAAS, PERFORMANCE, HETEROSTRUCTURES, PRESSURE, MBE
Related URLs :
Additional Information : Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 102 (4) and may be found at http://dx.doi.org/10.1063/1.4789859
Depositing User : Symplectic Elements
Date Deposited : 07 Oct 2013 09:47
Last Modified : 23 Jan 2015 14:33
URI: http://epubs.surrey.ac.uk/id/eprint/801321

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