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Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

Sweeney, SJ and Jin, SR (2013) Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared JOURNAL OF APPLIED PHYSICS, 113 (4), ARTN 0.

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Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Date : 28 January 2013
Identification Number : 10.1063/1.4789624
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, QUANTUM-WELL LASERS, MOLECULAR-BEAM EPITAXY, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR-LASERS, THRESHOLD CURRENT, MU-M, BAND-GAP, RECOMBINATION, GAAS1-XBIX, GAINNAS
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Additional Information : Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 113 (4)and may be found at http://dx.doi.org/10.1063/1.4789624
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:21
Last Modified : 31 Oct 2017 15:13
URI: http://epubs.surrey.ac.uk/id/eprint/801320

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