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InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

Hosea, TJC, Chai, GMT, Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Sweeney, SJ, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

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Abstract

Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, E, and spin-orbit splitting, Δ, respectively. The possibility of achieving Δ>E and a reduced temperature (T) dependence for E are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure E (x, T) and Δ(x, T) in InGa BiAs/InP samples for 0≤x≤0.032 by optical spectroscopy. While we find no clear evidence of a decreased dE /dT (≈0.33±0.07meV/K in all samples) we find Δ>E for x>3.3-4.3%. The predictions of a valence band anti-crossing model agree well with the measurements. © 2012 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
AuthorsEmailORCID
Hosea, TJCUNSPECIFIEDUNSPECIFIED
Chai, GMTUNSPECIFIEDUNSPECIFIED
Marko, IPUNSPECIFIEDUNSPECIFIED
Batool, ZUNSPECIFIEDUNSPECIFIED
Hild, KUNSPECIFIEDUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Hossain, NUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Petropoulos, JPUNSPECIFIEDUNSPECIFIED
Zhong, YUNSPECIFIEDUNSPECIFIED
Dongmo, PBUNSPECIFIEDUNSPECIFIED
Zide, JMOUNSPECIFIEDUNSPECIFIED
Date : 2012
Identification Number : https://doi.org/10.1109/ICP.2012.6379872
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:21
Last Modified : 28 Mar 2017 13:21
URI: http://epubs.surrey.ac.uk/id/eprint/801317

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