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InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

Hosea, TJC, Chai, GMT, Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Sweeney, SJ, Petropoulos, JP, Zhong, Y , Dongmo, PB and Zide, JMO (2012) InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

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Abstract

Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, E, and spin-orbit splitting, Δ, respectively. The possibility of achieving Δ>E and a reduced temperature (T) dependence for E are significant for suppressing recombination losses and improving performance in mid-infrared photonic devices. We measure E (x, T) and Δ(x, T) in InGa BiAs/InP samples for 0≤x≤0.032 by optical spectroscopy. While we find no clear evidence of a decreased dE /dT (≈0.33±0.07meV/K in all samples) we find Δ>E for x>3.3-4.3%. The predictions of a valence band anti-crossing model agree well with the measurements. © 2012 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Hosea, TJCUNSPECIFIEDUNSPECIFIED
Chai, GMTUNSPECIFIEDUNSPECIFIED
Marko, IPUNSPECIFIEDUNSPECIFIED
Batool, ZUNSPECIFIEDUNSPECIFIED
Hild, KUNSPECIFIEDUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Hossain, NUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Petropoulos, JPUNSPECIFIEDUNSPECIFIED
Zhong, YUNSPECIFIEDUNSPECIFIED
Dongmo, PBUNSPECIFIEDUNSPECIFIED
Zide, JMOUNSPECIFIEDUNSPECIFIED
Date : 2012
Identification Number : 10.1109/ICP.2012.6379872
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:21
Last Modified : 31 Oct 2017 15:13
URI: http://epubs.surrey.ac.uk/id/eprint/801317

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