Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure

Aldukhayel, A, Jin, SR, Marko, IP, Sweeney, SJ, Zhang, SY, Revin, DG and Cockburn, JW (2013) Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure Physica Status Solidi (B) Basic Research, 250 (4). pp. 693-697.

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Abstract

In order to identify the performance limitations of InGaAs/AlAs(Sb) quantum cascade lasers, experimental investigations of the temperature and pressure dependencies of the threshold current (I) were undertaken. Using the theoretical optical phonon current (I) and carrier leakage (I) to fit the measured threshold current at various pressures, we show that the electron scattering from the top lasing level to the upper L-minima gives rise to the increase in I with pressure and temperature. It was found that this carrier leakage path accounts for approximately 3% of I at RT and is negligible at 100K. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Aldukhayel, A, Jin, SR, Marko, IP, Sweeney, SJ, Zhang, SY, Revin, DG and Cockburn, JW
Date :	April 2013
DOI :	10.1002/pssb.201200848
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 13:21
Last Modified :	24 Jan 2020 12:07
URI:	http://epubs.surrey.ac.uk/id/eprint/801315

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