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On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs

Bailey, MJ, Jeynes, C, Sealy, BJ, Webb, RP and Gwilliam, RM (2010) On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs In: 19th International Conference on Ion Beam Analysis, 2009-09-07 - 2009-09-11, Univ Cambridge, Cambridge, ENGLAND.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Bailey, MJUNSPECIFIEDUNSPECIFIED
Jeynes, CUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Webb, RPUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Date : 1 June 2010
Identification Number : 10.1016/j.nimb.2010.02.033
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/PBLELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, SIMS, ERDA, Blistering, Hydrogen, Exfoliation, Smart-cut, Ion-cut, SILICON, TEMPERATURE, CUT, SMART-CUT(C), SUBSTRATE, SURFACE, SURREY
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:51
Last Modified : 31 Oct 2017 17:06
URI: http://epubs.surrey.ac.uk/id/eprint/795087

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