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Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

Shcherbachev, K and Bailey, MJ (2011) Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001) Physica Status Solidi (A) Applications and Materials, 208 (11). pp. 2576-2581.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Chemistry
Authors :
AuthorsEmailORCID
Shcherbachev, KUNSPECIFIEDUNSPECIFIED
Bailey, MJUNSPECIFIEDUNSPECIFIED
Date : 2011
Identification Number : https://doi.org/10.1002/pssa.201184259
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:51
Last Modified : 28 Mar 2017 13:51
URI: http://epubs.surrey.ac.uk/id/eprint/795085

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