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High concentration Mn ion implantation in Si

Peng, N, Jeynes, C, Bailey, MJ, Adikaari, D, Stolojan, V and Webb, RP (2009) High concentration Mn ion implantation in Si NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 267 (8-9). pp. 1623-1625.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Chemistry
Authors :
Peng, N
Jeynes, C
Bailey, MJ
Adikaari, D
Stolojan, V
Webb, RP
Date : 1 May 2009
DOI : 10.1016/j.nimb.2009.01.065
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, Dilute magnetic semiconductor, Ion implantation, Si, Mn doping, SEMICONDUCTORS, SILICON
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:51
Last Modified : 31 Oct 2017 15:10

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