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The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs

Webb, M, Jeynes, C, Gwilliam, R, Too, P, Kozanecki, A, Domagala, J, Royle, A and Sealy, B (2005) The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 240 (1-2). pp. 142-145.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Chemistry
Authors :
AuthorsEmailORCID
Webb, MUNSPECIFIEDUNSPECIFIED
Jeynes, CUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Too, PUNSPECIFIEDUNSPECIFIED
Kozanecki, AUNSPECIFIEDUNSPECIFIED
Domagala, JUNSPECIFIEDUNSPECIFIED
Royle, AUNSPECIFIEDUNSPECIFIED
Sealy, BUNSPECIFIEDUNSPECIFIED
Date : 1 October 2005
Identification Number : https://doi.org/10.1016/j.nimb.2005.06.104
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, smart-cut, exfoliation, blistering, hydrogen implantation, TECHNOLOGY, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 13:51
Last Modified : 28 Mar 2017 13:51
URI: http://epubs.surrey.ac.uk/id/eprint/795078

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