Memory effect in the current-voltage characteristic of a low-band gap conjugated polymer
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Taylor, DM and Mills, CA (2001) Memory effect in the current-voltage characteristic of a low-band gap conjugated polymer JOURNAL OF APPLIED PHYSICS, 90 (1). pp. 306-309.
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Official URL: http://dx.doi.org/10.1063/1.1379564
| Item Type: | Article | |||||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute | |||||||||
| Authors : |
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| Date : | 1 July 2001 | |||||||||
| Identification Number : | https://doi.org/10.1063/1.1379564 | |||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ELECTRICAL CHARACTERIZATION, TRANSISTORS, DEVICES | |||||||||
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| Additional Information : | Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics, 90 (1) 306-309 and may be found at http://dx.doi.org/10.1063/1.1379564 | |||||||||
| Depositing User : | Symplectic Elements | |||||||||
| Date Deposited : | 16 Aug 2013 15:16 | |||||||||
| Last Modified : | 17 Jan 2015 14:41 | |||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/794567 |
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