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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19). ? - ?. ISSN 0003-6951

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Item Type: Article
Additional Information:

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 89 (19) 192105 and may be found at J. A. Sharp et al., Appl. Phys.Lett. 89, 192105 (2006)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ULTRA-SHALLOW JUNCTIONS, THERMAL-STABILITY, ACTIVATION, REACTIVATION, PROFILES, DEFECTS, DOPANTS
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 07 Dec 2011 10:56
Last Modified: 18 Sep 2014 01:54
URI: http://epubs.surrey.ac.uk/id/eprint/7914

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