University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19). ? - ?. ISSN 0003-6951

[img]
Preview
PDF
fulltext.pdf - Published Version
Available under License : See the attached licence file.

Download (143Kb)
[img] Plain Text (licence)
licence.txt

Download (1516b)

Abstract

Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150 degrees C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150 degrees C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five- and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon.

Item Type: Article
Additional Information:

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 89 (19) 192105 and may be found at J. A. Sharp et al., Appl. Phys.Lett. 89, 192105 (2006)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, ULTRA-SHALLOW JUNCTIONS, THERMAL-STABILITY, ACTIVATION, REACTIVATION, PROFILES, DEFECTS, DOPANTS
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 07 Dec 2011 10:56
Last Modified: 23 Sep 2013 18:52
URI: http://epubs.surrey.ac.uk/id/eprint/7914

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800