Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.
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|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||6 November 2006|
|Identification Number :||https://doi.org/10.1063/1.2385215|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ULTRA-SHALLOW JUNCTIONS, THERMAL-STABILITY, ACTIVATION, REACTIVATION, PROFILES, DEFECTS, DOPANTS|
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|Additional Information :||
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 89 (19) 192105 and may be found at J. A. Sharp et al., Appl. Phys.Lett. 89, 192105 (2006)
|Depositing User :||Mr Adam Field|
|Date Deposited :||07 Dec 2011 10:56|
|Last Modified :||06 May 2015 13:33|
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