Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19). ? - ?. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2385215
Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150 degrees C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150 degrees C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five- and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon.
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 89 (19) 192105 and may be found at J. A. Sharp et al., Appl. Phys.Lett. 89, 192105 (2006)
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, ULTRA-SHALLOW JUNCTIONS, THERMAL-STABILITY, ACTIVATION, REACTIVATION, PROFILES, DEFECTS, DOPANTS|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Deposited By:||Mr Adam Field|
|Deposited On:||07 Dec 2011 10:56|
|Last Modified:||18 Apr 2013 14:33|
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