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Band anticrossing in GaNxSb1-x

Jefferson, PH, Veal, TD, Piper, LFJ, Bennett, BR, McConville, CF, Murdin, BN, Buckle, L, Smith, GW and Ashley, T (2006) Band anticrossing in GaNxSb1-x APPLIED PHYSICS LETTERS, 89 (11). ? - ?. ISSN 0003-6951

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmail
Jefferson, PHUNSPECIFIED
Veal, TDUNSPECIFIED
Piper, LFJUNSPECIFIED
Bennett, BRUNSPECIFIED
McConville, CFUNSPECIFIED
Murdin, BNUNSPECIFIED
Buckle, LUNSPECIFIED
Smith, GWUNSPECIFIED
Ashley, TUNSPECIFIED
Date : 11 September 2006
Identification Number : 10.1063/1.2349832
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ALLOYS, SEMICONDUCTORS, PHOTOLUMINESCENCE, PARAMETERS, ABSORPTION, REDUCTION, GANASSB, GROWTH, GANSB
Related URLs :
Additional Information :

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 89 (11) 111921 and may be found at P. H. Jefferson et al., Appl. Phys.Lett. 89, 111921 (2006)

Depositing User : Mr Adam Field
Date Deposited : 25 Nov 2011 14:35
Last Modified : 23 May 2015 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/7913

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