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Band anticrossing in GaNxSb1-x

Jefferson, PH, Veal, TD, Piper, LFJ, Bennett, BR, McConville, CF, Murdin, BN, Buckle, L, Smith, GW and Ashley, T (2006) Band anticrossing in GaNxSb1-x APPLIED PHYSICS LETTERS, 89 (11). ? - ?. ISSN 0003-6951

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Item Type: Article
Additional Information:

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 89 (11) 111921 and may be found at P. H. Jefferson et al., Appl. Phys.Lett. 89, 111921 (2006)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ALLOYS, SEMICONDUCTORS, PHOTOLUMINESCENCE, PARAMETERS, ABSORPTION, REDUCTION, GANASSB, GROWTH, GANSB
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 25 Nov 2011 14:35
Last Modified: 22 Nov 2014 14:33
URI: http://epubs.surrey.ac.uk/id/eprint/7913

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