Band anticrossing in GaNxSb1-x
Jefferson, PH, Veal, TD, Piper, LFJ, Bennett, BR, McConville, CF, Murdin, BN, Buckle, L, Smith, GW and Ashley, T (2006) Band anticrossing in GaNxSb1-x APPLIED PHYSICS LETTERS, 89 (11), ARTN 1.
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|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||11 September 2006|
|Identification Number :||10.1063/1.2349832|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ALLOYS, SEMICONDUCTORS, PHOTOLUMINESCENCE, PARAMETERS, ABSORPTION, REDUCTION, GANASSB, GROWTH, GANSB|
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|Additional Information :||
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 89 (11) 111921 and may be found at P. H. Jefferson et al., Appl. Phys.Lett. 89, 111921 (2006)
|Depositing User :||Mr Adam Field|
|Date Deposited :||25 Nov 2011 14:35|
|Last Modified :||23 May 2015 13:33|
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