Band anticrossing in GaNxSb1-x
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Jefferson, PH, Veal, TD, Piper, LFJ, Bennett, BR, McConville, CF, Murdin, BN, Buckle, L, Smith, GW and Ashley, T (2006) Band anticrossing in GaNxSb1-x APPLIED PHYSICS LETTERS, 89 (11). ? - ?. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2349832
Abstract
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E- and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k center dot p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV.
| Item Type: | Article |
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| Additional Information: | Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (11) 111921 and may be found at P. H. Jefferson et al., Appl. Phys.Lett. 89, 111921 (2006) |
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, ALLOYS, SEMICONDUCTORS, PHOTOLUMINESCENCE, PARAMETERS, ABSORPTION, REDUCTION, GANASSB, GROWTH, GANSB |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
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| ID Code: | 7913 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 25 Nov 2011 14:35 |
| Last Modified: | 25 Apr 2013 12:43 |
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