Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip
Hoshino, K, Rozanski, LJ, Bout, DAV and Zhang, X (2008) Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip APPLIED PHYSICS LETTERS, 92 (13), ARTN 1.
Near field Si LED.pdf - Version of Record
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering|
|Date :||31 March 2008|
|Identification Number :||https://doi.org/10.1063/1.2904698|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, FOCUSED ION-BEAM, ELECTRICAL-PROPERTIES, N JUNCTIONS, ELECTROLUMINESCENCE, FABRICATION, APERTURE, IMPLANTATION, NSOM|
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|Additional Information :||
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 92(13) 131106 and may be found at K. Hoshino et al., Appl. Phys.Lett. 92, 131106 (2008)
|Depositing User :||Symplectic Elements|
|Date Deposited :||01 Dec 2011 12:39|
|Last Modified :||17 Jan 2015 14:35|
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