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Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Cheetham, KJ, Krier, A, Marko, IP, Aldukhayel, A and Sweeney, SJ (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes APPL PHYS LETT, 99 (14). ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: antimony compounds, arsenic compounds, Auger effect, band structure, electroluminescence, electron-hole recombination, gallium compounds, indium compounds, infrared spectra, light emitting diodes, spin-orbit interactions, PRESSURE-DEPENDENCE, MU-M, LASERS, ALLOYS, SEMICONDUCTORS, TEMPERATURE, LEDS
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Symplectic Elements
Date Deposited: 17 Nov 2011 10:59
Last Modified: 23 Sep 2013 18:52
URI: http://epubs.surrey.ac.uk/id/eprint/7898

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