Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
Tools
Tools
Tools
Cheetham, KJ, Krier, A, Marko, IP, Aldukhayel, A and Sweeney, SJ (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes APPL PHYS LETT, 99 (14). ISSN 0003-6951
![[img]](/style/images/fileicons/application_pdf.png)
| PDF - Published Version Available under License : See the attached licence file. 975Kb | |
![[img]](/style/images/fileicons/text_plain.png) | Plain Text (licence) 1516b |
Official URL: http://dx.doi.org/10.1063/1.3646910
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | antimony compounds, arsenic compounds, Auger effect, band structure, electroluminescence, electron-hole recombination, gallium compounds, indium compounds, infrared spectra, light emitting diodes, spin-orbit interactions, PRESSURE-DEPENDENCE, MU-M, LASERS, ALLOYS, SEMICONDUCTORS, TEMPERATURE, LEDS |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| ID Code: | 7898 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 17 Nov 2011 10:59 |
| Last Modified: | 29 Apr 2013 14:33 |
Document Downloads
Repository Staff Only: item control page