Band structure properties of novel BxGa1-xP alloys for silicon integration
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Hossain, N, Hosea, TJC, Sweeney, SJ, Liebich, S, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Band structure properties of novel BxGa1-xP alloys for silicon integration JOURNAL OF APPLIED PHYSICS, 110 (6). ? - ?. ISSN 0021-8979
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Official URL: http://dx.doi.org/10.1063/1.3630018
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, GAP, SUBSTRATE, SI, SEMICONDUCTORS, EPITAXY, GROWTH, MOVPE, GAAS |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| Related URLs: | |
| ID Code: | 7895 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 17 Nov 2011 11:21 |
| Last Modified: | 11 May 2013 14:54 |
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