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Band structure properties of novel BxGa1-xP alloys for silicon integration

Hossain, N, Hosea, TJC, Sweeney, SJ, Liebich, S, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Band structure properties of novel BxGa1-xP alloys for silicon integration JOURNAL OF APPLIED PHYSICS, 110 (6). ? - ?. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, GAP, SUBSTRATE, SI, SEMICONDUCTORS, EPITAXY, GROWTH, MOVPE, GAAS
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Symplectic Elements
Date Deposited: 17 Nov 2011 11:21
Last Modified: 09 Jun 2014 13:35
URI: http://epubs.surrey.ac.uk/id/eprint/7895

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