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GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

Tan, SL, Zhang, S, Soong, WM, Goh, YL, Tan, LJJ, Ng, JS, David, JPR, Marko, IP, Adams, AR, Sweeney, SJ and Allam, J (2011) GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications IEEE ELECTRON DEVICE LETTERS, 32 (7). pp. 919-921.

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Item Type: Article
Authors :
Tan, SL
Zhang, S
Soong, WM
Goh, YL
Tan, LJJ
Ng, JS
David, JPR
Marko, IP
Adams, AR
Sweeney, SJ
Allam, J
Date : 1 July 2011
DOI : 10.1109/LED.2011.2145351
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, Absorption coefficient, dark current, dilute nitride, InGaAsN, InGaAsNSb, photodetectors, quantum efficiency (QE), responsivity, AVALANCHE PHOTODIODES
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:58
Last Modified : 31 Oct 2017 14:14

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