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GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

Tan, SL, Zhang, S, Soong, WM, Goh, YL, Tan, LJJ, Ng, JS, David, JPR, Marko, IP, Adams, AR, Sweeney, SJ and Allam, J (2011) GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications IEEE ELECTRON DEVICE LETTERS, 32 (7). pp. 919-921.

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Item Type: Article
Authors :
AuthorsEmailORCID
Tan, SLUNSPECIFIEDUNSPECIFIED
Zhang, SUNSPECIFIEDUNSPECIFIED
Soong, WMUNSPECIFIEDUNSPECIFIED
Goh, YLUNSPECIFIEDUNSPECIFIED
Tan, LJJUNSPECIFIEDUNSPECIFIED
Ng, JSUNSPECIFIEDUNSPECIFIED
David, JPRUNSPECIFIEDUNSPECIFIED
Marko, IPUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Allam, JUNSPECIFIEDUNSPECIFIED
Date : 1 July 2011
Identification Number : https://doi.org/10.1109/LED.2011.2145351
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, Absorption coefficient, dark current, dilute nitride, InGaAsN, InGaAsNSb, photodetectors, quantum efficiency (QE), responsivity, AVALANCHE PHOTODIODES
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:58
Last Modified : 28 Mar 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/7892

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