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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

Hossain, N, Sweeney, SJ, Rogowsky, S, Ostendorf, R, Wagner, J, Liebich, S, Zimprich, M, Volz, K, Kunert, B and Stolz, W (2011) Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE ELECTRONICS LETTERS, 47 (16). pp. 931-933.

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Item Type: Article
Authors :
AuthorsEmailORCID
Hossain, NUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Rogowsky, SUNSPECIFIEDUNSPECIFIED
Ostendorf, RUNSPECIFIEDUNSPECIFIED
Wagner, JUNSPECIFIEDUNSPECIFIED
Liebich, SUNSPECIFIEDUNSPECIFIED
Zimprich, MUNSPECIFIEDUNSPECIFIED
Volz, KUNSPECIFIEDUNSPECIFIED
Kunert, BUNSPECIFIEDUNSPECIFIED
Stolz, WUNSPECIFIEDUNSPECIFIED
Date : 4 August 2011
Identification Number : https://doi.org/10.1049/el.2011.1927
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, SUBSTRATE, SILICON
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:58
Last Modified : 28 Mar 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/7889

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