Fast physical models for Si LDMOS power transistor characterization
Tools
Tools
Tools
Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J and Snowden, CM (2011) Fast physical models for Si LDMOS power transistor characterization IEEE MTT-S International Microwave Symposium Digest . 1 - 1. ISSN 0149-645X
![[img]](/style/images/fileicons/application_pdf.png)
| PDF - Accepted Version Available under License : See the attached licence file. 445Kb | |
![[img]](/style/images/fileicons/text_plain.png) | Plain Text (licence) 1516b |
Official URL: http://dx.doi.org/10.1109/MWSYM.2011.5973484
Abstract
A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute |
| ID Code: | 7886 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 17 Nov 2011 11:37 |
| Last Modified: | 25 May 2013 14:58 |
Document Downloads
Repository Staff Only: item control page