Fast physical models for Si LDMOS power transistor characterization
Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J and Snowden, CM (2011) Fast physical models for Si LDMOS power transistor characterization IEEE MTT-S International Microwave Symposium Digest . 1 - 1. ISSN 0149-645X
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Official URL: http://dx.doi.org/10.1109/MWSYM.2011.5973484
A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Deposited By:||Symplectic Elements|
|Deposited On:||17 Nov 2011 11:37|
|Last Modified:||25 May 2013 14:58|
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