Fast physical models for Si LDMOS power transistor characterization
Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J and Snowden, CM (2011) Fast physical models for Si LDMOS power transistor characterization IEEE MTT-S International Microwave Symposium Digest. p. 1.
Everett_IMS_2011.pdf - Accepted version Manuscript
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A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Identification Number :||https://doi.org/10.1109/MWSYM.2011.5973484|
|Depositing User :||Symplectic Elements|
|Date Deposited :||17 Nov 2011 11:37|
|Last Modified :||23 Sep 2013 18:52|
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