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Fast physical models for Si LDMOS power transistor characterization

Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J and Snowden, CM (2011) Fast physical models for Si LDMOS power transistor characterization IEEE MTT-S International Microwave Symposium Digest. 1 - 1. ISSN 0149-645X

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A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.

Item Type: Article
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Depositing User: Symplectic Elements
Date Deposited: 17 Nov 2011 11:37
Last Modified: 23 Sep 2013 18:52

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