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Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions

Wittmann, B, Golub, LE, Danilov, SN, Karch, J, Reitmaier, C, Kvon, ZD, Vinh, NQ, van der Meer, AFG, Murdin, B and Ganichev, SD (2008) Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions PHYSICAL REVIEW B, 78 (20). ? - ?. ISSN 1098-0121

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The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular-momentum transfer of photons to the photoexcited electrons at resonant intersubband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helicity, when the propagation direction of the photons is reversed. Making use of the tunability of the free-electron laser FELIX, we demonstrate that the current direction changes by sweeping the photon energy through the intersubband resonance condition, in agreement with theoretical considerations.

Item Type: Article
Additional Information: Copyright 2008 American Physical Society.
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, FIELD-EFFECT TRANSISTORS, ALGAN/GAN
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 25 Nov 2011 14:25
Last Modified: 23 Sep 2013 18:52

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