Solid phase epitaxial re-growth of Sn ion implanted germanium thin films
Giubertoni, D, Demenev, E, Jestin, Y, Meirer, F, Gennaro, S, Iacob, E, Pepponi, G, Pucker, G, Bersani, M, Gupta, S, Saraswat, KC, Gwilliam, RM, Jeynes, C and Colaux, JL (2012) Solid phase epitaxial re-growth of Sn ion implanted germanium thin films AIP Conference Proceedings, 1496. pp. 103-106.
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Doping of Ge with Sn atoms by ion implantation and annealing by solid phase epitaxial re-growth process was investigated as a possible way to create GeSn layers. Ion implantation was carried out at liquid nitrogen to avoid nano-void formation and three implant doses were tested: 5×10, 1×10 and 5×10 at/cm, respectively. Implant energy was set to 45 keV and implants were carried out through an 11 nm SiNO film to prevent Sn out-diffusion upon annealing. This was only partially effective. Samples were then annealed in inert atmosphere either at 350°C varying anneal time or for 100 s varying temperature from 300 to 500°C. SPER was effective to anneal damage without Sn diffusion at 350° for samples implanted at medium and low fluences whereas the 5×10 at/cm samples remained with a ∼15 nm amorphous layer even when applying the highest thermal budget. © 2012 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Identification Number :||https://doi.org/10.1063/1.4766500|
|Additional Information :||
Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in AIP Conference Proceedings, 1496 and may be found at D. Giubertoni et al., AIP Conf. Proc. 1496, pp. 103-106 (2012)
|Depositing User :||Symplectic Elements|
|Date Deposited :||16 Aug 2013 09:23|
|Last Modified :||23 Sep 2013 20:10|
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