Total internal reflection optical switch in SOI with defect engineered barrier region
Thomson, D, Reed, G, Knights, A, Yang, P, Gardes, F, Smith, A and Litvinenko, K (2010) Total internal reflection optical switch in SOI with defect engineered barrier region Journal of Lightwave Technology, 28 (17). 2483 - 2491. ISSN 0733-8724
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Official URL: http://dx.doi.org/10.1364/OE.19.011804
Total internal reflection optical switches offer a switching operation which can be wavelength insensitive, thermally stable and polarisation independent. The implementation of such a switch based upon carrier injection in silicon is difficult due to the long diffusion lengths of injected free carriers. In this paper experimental results are presented which show that a reflective type switching operation is obtainable if a barrier formed of defective silicon is used to reduce free carrier diffusion.
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|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Deposited By:||Symplectic Elements|
|Deposited On:||02 Feb 2012 11:26|
|Last Modified:||08 Jun 2013 16:14|
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