Total internal reflection optical switch in SOI with defect engineered barrier region
Thomson, D, Reed, G, Knights, A, Yang, P, Gardes, F, Smith, A and Litvinenko, K (2010) Total internal reflection optical switch in SOI with defect engineered barrier region Journal of Lightwave Technology, 28 (17). pp. 2483-2491.
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Total internal reflection optical switches offer a switching operation which can be wavelength insensitive, thermally stable and polarisation independent. The implementation of such a switch based upon carrier injection in silicon is difficult due to the long diffusion lengths of injected free carriers. In this paper experimental results are presented which show that a reflective type switching operation is obtainable if a barrier formed of defective silicon is used to reduce free carrier diffusion.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||28 June 2010|
|Identification Number :||https://doi.org/10.1364/OE.19.011804|
|Additional Information :||
Copyright 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
|Depositing User :||Symplectic Elements|
|Date Deposited :||02 Feb 2012 11:26|
|Last Modified :||23 Sep 2013 18:52|
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