Crystalline-silicon-based infra-red LEDs and routes to laser diodes
Lourenço, MA and Homewood, KP (2011) Crystalline-silicon-based infra-red LEDs and routes to laser diodes Thin Solid Films, 519 (24). pp. 8441-8445.
Lourenco_TSF_2011.pdf - Accepted version Manuscript
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We review progress in silicon LEDs using dislocation engineering to achieve high temperature operation, a process that is fully CMOS (Complementary Metal Oxide Semiconductor) compatible. We concentrate on devices operating in the near infra-red where high value applications are. The need for silicon emitters, lasers and optical amplifiers is discussed followed by an outline of previous approaches and possible future routes explored. Results on gain in silicon are reported and routes to electrically pumped injection lasers and optical amplifiers considered. Extension of 1.1 and 1.5 μm devices to other wavelengths is discussed
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Identification Number :||https://doi.org/10.1016/j.tsf.2011.05.020|
|Additional Information :||NOTICE: this is the author’s version of a work that was accepted for publication in Thin Solid Films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Thin Solid Films, 519(24), October 2011, DOI 10.1016/j.tsf.2011.05.020.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||14 Dec 2011 11:44|
|Last Modified :||23 Sep 2013 18:52|
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