Intrinsic gain in self-aligned polysilicon source-gated transistors
Sporea, RA, Trainor, MJ, Young, ND, Shannon, JM and Silva, SRP (2010) Intrinsic gain in self-aligned polysilicon source-gated transistors IEEE Transactions on Electron Devices, 57 (10). pp. 2434-2439.
TED Sporea Jun2010 Symplectic.pdf - Accepted version Manuscript
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Plain Text (licence)
Thin-film, self-aligned source-gated transistors (SGTs) have been made in polysilicon. The very high output impedance of this type of transistor makes it suited to analog circuits. Intrinsic voltage gains of greater than one thousand have been measured at particular drain voltages. The drain voltage dependence of the gain is explained based on the device physics of the source-gated transistor and the fact that pinch-off occurs at both the source and the drain. The results obtained from these devices, which are far from optimal, suggest that, with proper design, the source-gated transistor is well suited to a wide range of analog applications.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Identification Number :||10.1109/TED.2010.2056151|
|Additional Information :||
Copyright 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
|Depositing User :||Symplectic Elements|
|Date Deposited :||02 Feb 2012 09:47|
|Last Modified :||23 Sep 2013 18:52|
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