Effects of process variations on the current in Schottky Barrier Source-Gated Transistors
Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2009) Effects of process variations on the current in Schottky Barrier Source-Gated Transistors Proceedings of the International Semiconductor Conference (CAS), 2. 413 - 416.
CAS 2009 Sporea Symplectic.pdf - Accepted Version
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The sensitivity of the drain current in Schottky barrier source-gated transistors to process variation is studied using computer simulations. It is shown that provided the device is designed correctly, the current is independent of source-drain separation and is insensitive to source length variations. However, uniform insulator thickness and precise control of the source barrier is needed if good current uniformity is to be obtained.
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|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Depositing User:||Symplectic Elements|
|Date Deposited:||25 Nov 2011 15:58|
|Last Modified:||23 Sep 2013 18:52|
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