Effects of process variations on the current in Schottky Barrier Source-Gated Transistors
Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2009) Effects of process variations on the current in Schottky Barrier Source-Gated Transistors Proceedings of the International Semiconductor Conference (CAS), 2 . 413 - 416.
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Official URL: http://dx.doi.org/10.1109/SMICND.2009.5336693
The sensitivity of the drain current in Schottky barrier source-gated transistors to process variation is studied using computer simulations. It is shown that provided the device is designed correctly, the current is independent of source-drain separation and is insensitive to source length variations. However, uniform insulator thickness and precise control of the source barrier is needed if good current uniformity is to be obtained.
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|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Symplectic Elements|
|Deposited On:||25 Nov 2011 15:58|
|Last Modified:||16 Feb 2013 15:12|
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