Performance improvements in polysilicon source-gated transistors
Sporea, RA, Trainor, MJ, Young, ND, Shannon, JM and Silva, SRP (2010) Performance improvements in polysilicon source-gated transistors DRC Conference Digest . 245 - 246.
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Official URL: http://dx.doi.org/10.1109/DRC.2010.5551977
The source-gated transistor (SGT) is a new type of transistor in which the current is controlled by a potential barrier at the source and by a gate which modulates the effective height of the source barrier. It is an ideal device architecture to be used with the low mobility materials typically applied to large area electronics, as it provides low saturation voltages and high output impedances. Furthermore, the high internal fields and low concentration of excess carriers lead to higher speed and better stability compared with FETs, particularly in disordered, low mobility semiconductors. As such, the SGT is especially well suited to thin-film analog circuits.
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|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Symplectic Elements|
|Deposited On:||06 Feb 2012 10:41|
|Last Modified:||16 Feb 2013 16:45|
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