Performance improvements in polysilicon source-gated transistors
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Sporea, RA, Trainor, MJ, Young, ND, Shannon, JM and Silva, SRP (2010) Performance improvements in polysilicon source-gated transistors DRC Conference Digest . 245 - 246.
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Official URL: http://dx.doi.org/10.1109/DRC.2010.5551977
Abstract
The source-gated transistor (SGT) is a new type of transistor in which the current is controlled by a potential barrier at the source and by a gate which modulates the effective height of the source barrier. It is an ideal device architecture to be used with the low mobility materials typically applied to large area electronics, as it provides low saturation voltages and high output impedances. Furthermore, the high internal fields and low concentration of excess carriers lead to higher speed and better stability compared with FETs, particularly in disordered, low mobility semiconductors. As such, the SGT is especially well suited to thin-film analog circuits.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre |
| ID Code: | 7849 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 06 Feb 2012 10:41 |
| Last Modified: | 16 Feb 2013 16:45 |
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