Polysilicon source-gated transistors for mixed-signal systems-on-panel
Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2010) Polysilicon source-gated transistors for mixed-signal systems-on-panel ECS Transactions, 33 (5). pp. 419-424.
ECS 2010 Symplectic.pdf - Accepted version Manuscript
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The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the SGT version can operate at a lower voltage and has larger output dynamic range for a given device geometry. The results are explained in relation to the saturation mechanisms of the SGT and are supported by experimental measurements of polysilicon devices.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Identification Number :||https://doi.org/10.1149/1.3481265|
|Additional Information :||© The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Trans. Volume 33, Issue 5. Advanced Applications pp. 419-424|
|Depositing User :||Symplectic Elements|
|Date Deposited :||04 Jan 2012 15:33|
|Last Modified :||09 Jun 2014 13:22|
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