Polysilicon source-gated transistors for mixed-signal systems-on-panel
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Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2010) Polysilicon source-gated transistors for mixed-signal systems-on-panel ECS Transactions, 33 (5). 419 - 424. ISSN 1938-6737
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Official URL: http://dx.doi.org/10.1149/1.3481265
Abstract
The performance benefits of using source-gated transistors (SGTs) in large-area analog electronic circuits are examined by both experiments and numerical simulations. As one of the key blocks in analog electronics, the current mirror circuit is taken as an example in the investigation. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the SGT based circuits can operate at a lower voltage and has larger output dynamic range for a given device geometry. The results are explained in relation to the saturation mechanisms of the SGT and are supported by experimental measurements of polysilicon devices.
| Item Type: | Article |
|---|---|
| Additional Information: | © The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Trans. Volume 33, Issue 5. Advanced Applications pp. 419-424 |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre |
| ID Code: | 7847 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 04 Jan 2012 15:33 |
| Last Modified: | 08 Jun 2013 15:37 |
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