Polysilicon source-gated transistors for mixed-signal systems-on-panel

Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2010) Polysilicon source-gated transistors for mixed-signal systems-on-panel ECS Transactions, 33 (5). pp. 419-424.

Preview	Text ECS 2010 Symplectic.pdf - Accepted version Manuscript Available under License : See the attached licence file. Download (388kB)
	Text (licence) licence.txt Download (1kB)

Abstract

The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the SGT version can operate at a lower voltage and has larger output dynamic range for a given device geometry. The results are explained in relation to the saturation mechanisms of the SGT and are supported by experimental measurements of polysilicon devices.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Sporea, RA, Guo, X, Shannon, JM and Silva, SRP
Date :	2010
DOI :	10.1149/1.3481265
Additional Information :	© The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Trans. Volume 33, Issue 5. Advanced Applications pp. 419-424
Depositing User :	Symplectic Elements
Date Deposited :	04 Jan 2012 15:33
Last Modified :	31 Oct 2017 14:14
URI:	http://epubs.surrey.ac.uk/id/eprint/7847

Actions (login required)

View Item

Downloads