Polysilicon source-gated transistors for mixed-signal systems-on-panel
Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2010) Polysilicon source-gated transistors for mixed-signal systems-on-panel Electrochemical Society - 218th ECS Meeting Abstracts 2010, MA 2010-02, 3 . 1834 - 1834. ISSN 1091-8213
|PDF - Accepted Version |
Available under License : See the attached licence file.
|Plain Text (licence)|
Official URL: http://dx.doi.org/10.1149/1.3481265
The performance benefits of using source-gated transistors (SGTs) in large-area analog electronic circuits are examined by both experiments and numerical simulations. As one of the key blocks in analog electronics, the current mirror circuit is taken as an example in the investigation. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the SGT based circuits can operate at a lower voltage and has larger output dynamic range for a given device geometry. The results are explained in relation to the saturation mechanisms of the SGT and are supported by experimental measurements of polysilicon devices.
|Additional Information:||© The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in 218th ECS Meeting Volume 33, Issue 5 - October 10 - October 15, 2010 , Las Vegas, NV|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Symplectic Elements|
|Deposited On:||04 Jan 2012 15:11|
|Last Modified:||24 Jan 2013 09:17|
Repository Staff Only: item control page