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Properties of source-gated transistors in polysilicon

Sporea, RA, Shannon, JM and Silva, SRP (2010) Properties of source-gated transistors in polysilicon 6th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2010.

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Abstract

This paper describes some of the performance characteristics of self-aligned polysilicon Schottky Source- Gated Transistors (SGTs) made on glass by laser annealing of amorphous silicon. The threshold and Schottky barrier height are tuned by varying the dose of dopants in the bulk and under the source respectively. These devices are well suited for analog applications owing to their low saturation voltage, low drain field dependence of the current and intrinsic gain which is in excess of 1000 for well designed structures. Double drain operation leads to fT ≈100MHz for non-optimized devices. Index Terms— Source-Gated Transistor, polysilicon, analog

Item Type: Article
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Copyright 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Symplectic Elements
Date Deposited: 03 Feb 2012 16:11
Last Modified: 23 Sep 2013 18:52
URI: http://epubs.surrey.ac.uk/id/eprint/7845

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