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The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers

Sharma, P, Anguita, JV, Stolojan, V, Henley, SJ and Silva, SRP (2010) The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers NANOTECHNOLOGY, 21 (29), ARTN 2.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
AuthorsEmailORCID
Sharma, PUNSPECIFIEDUNSPECIFIED
Anguita, JVUNSPECIFIEDUNSPECIFIED
Stolojan, VUNSPECIFIEDUNSPECIFIED
Henley, SJUNSPECIFIEDUNSPECIFIED
Silva, SRPUNSPECIFIEDUNSPECIFIED
Date : 23 July 2010
Identification Number : https://doi.org/10.1088/0957-4484/21/29/295603
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Science & Technology - Other Topics, Materials Science, Physics, AMORPHOUS-SILICON, RAMAN-SPECTRA, EVAPORATION, SCATTERING, SHAPE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:58
Last Modified : 28 Mar 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/7842

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